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Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches

dc.contributor.authorWang, Gang
dc.contributor.authorLoo, Roger
dc.contributor.authorSouriau, Laurent
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorLee, W
dc.contributor.authorCaymax, Matty
dc.contributor.authorLin, Vic
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBlanpain, Bart
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T05:07:06Z
dc.date.available2021-10-18T05:07:06Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16519
dc.sourceIIOimport
dc.titleFabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium I: Silicon and Germanium Issues for Future CMOS Devices
dc.source.conferencedate8/06/2009
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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