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High-k/ metal-gate stack work-function tuning by rare-earth capping layers: interface dipole or bulk charge?

dc.contributor.authorYu, H.Y
dc.contributor.authorChang, S.Z.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorAbsil, Philippe
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorWann, C
dc.contributor.authorMii, Y.J
dc.date.accessioned2021-10-18T05:39:29Z
dc.date.available2021-10-18T05:39:29Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16592
dc.sourceIIOimport
dc.titleHigh-k/ metal-gate stack work-function tuning by rare-earth capping layers: interface dipole or bulk charge?
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.source.peerreviewno
dc.source.beginpage69
dc.source.endpage70
dc.source.conferenceInternational Symposium on VLSI Technology, Systems, and Applications - VLSI-TSA
dc.source.conferencedate27/04/2009
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - imec


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