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Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain

dc.contributor.authorAmat, Esteve
dc.contributor.authorRodriguez, Rosana
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorMartin Martinez, Javier
dc.contributor.authorNafria, Montse
dc.contributor.authorAymerich, Xavier
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorBauer, M.
dc.contributor.authorVerheyen,
dc.date.accessioned2021-10-18T15:15:38Z
dc.date.available2021-10-18T15:15:38Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16652
dc.sourceIIOimport
dc.titleChannel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
dc.typeProceedings paper
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.source.peerreviewyes
dc.source.conferenceIEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT
dc.source.conferencedate1/11/2010
dc.source.conferencelocationShanghai China
imec.availabilityPublished - imec


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