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Electrical properties of InGaAs/high-k oxide interfaces: measurement and simulation

dc.contributor.authorBrammertz, Guy
dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorMerckling, Clement
dc.contributor.authorChang, Mark
dc.contributor.authorWang, Wei-E
dc.contributor.authorPasslack, Matthias
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T15:25:57Z
dc.date.available2021-10-18T15:25:57Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16796
dc.sourceIIOimport
dc.titleElectrical properties of InGaAs/high-k oxide interfaces: measurement and simulation
dc.typeMeeting abstract
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorPasslack, Matthias
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpageI6.9
dc.source.conferenceMRS Spring Meeting Symposium I: Materials for End-of-Roadmap Scaling of CMOS Devices
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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