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Substrates and gate dielectrics: the materials issue for sub-22nm CMOS scaling

dc.contributor.authorCaymax, Matty
dc.contributor.authorBellenger, Florence
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDekoster, Johan
dc.contributor.authorDelabie, Annelies
dc.contributor.authorLoo, Roger
dc.contributor.authorMerckling, Clement
dc.contributor.authorNguyen, Duy
dc.contributor.authorNyns, Laura
dc.contributor.authorSioncke, Sonja
dc.contributor.authorVincent, Benjamin
dc.contributor.authorWang, Gang
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T15:30:40Z
dc.date.available2021-10-18T15:30:40Z
dc.date.issued2010-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16835
dc.sourceIIOimport
dc.titleSubstrates and gate dielectrics: the materials issue for sub-22nm CMOS scaling
dc.typeMeeting abstract
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.source.peerreviewno
dc.source.beginpageI4.5
dc.source.conferenceMRS Spring Meeting Symposium I: Materials for End-of-Roadmap scaling of CMOS devices
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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