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Positive and negative bias temperature instability on sub-nanometer EOT high-K MOSFETs

dc.contributor.authorCho, Moon Ju
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRoussel, Philippe
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorTseng, Joshua
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T15:35:04Z
dc.date.available2021-10-18T15:35:04Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16865
dc.sourceIIOimport
dc.titlePositive and negative bias temperature instability on sub-nanometer EOT high-K MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewno
dc.source.beginpage1095
dc.source.endpage1098
dc.source.conference48th Annual IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/05/2010
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - imec


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