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Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures

dc.contributor.authorCui, Hushan
dc.contributor.authorVan Hoof, Rita
dc.contributor.authorSeveri, Simone
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorKnoops, An
dc.contributor.authorDelande, Tinne
dc.contributor.authorPancken, Joris
dc.contributor.authorClaes, Martine
dc.date.accessioned2021-10-18T15:44:22Z
dc.date.available2021-10-18T15:44:22Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16923
dc.sourceIIOimport
dc.titleWafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures
dc.typeMeeting abstract
dc.contributor.imecauthorVan Hoof, Rita
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDelande, Tinne
dc.contributor.imecauthorPancken, Joris
dc.contributor.imecauthorClaes, Martine
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2333
dc.source.conference218th ECS Meeting Symposium J3: Microfabricated and Nanofabricated Systems for MEMS/NEMS 9
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. 2010-02


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