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Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures

dc.contributor.authorCui, Hushan
dc.contributor.authorVan Hoof, Rita
dc.contributor.authorSeveri, Simone
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorKnoops, An
dc.contributor.authorDelande, Tinne
dc.contributor.authorPancken, Joris
dc.contributor.authorClaes, Martine
dc.date.accessioned2021-10-18T15:44:34Z
dc.date.available2021-10-18T15:44:34Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16924
dc.sourceIIOimport
dc.titleWafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures
dc.typeProceedings paper
dc.contributor.imecauthorVan Hoof, Rita
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDelande, Tinne
dc.contributor.imecauthorPancken, Joris
dc.contributor.imecauthorClaes, Martine
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage295
dc.source.endpage307
dc.source.conferenceChemical Sensors 9 - and MEMS/NEMS 9
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 33, Iss. 8


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