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Patterning of 25nm contact holes at 90nm pitch: combination of L/S double exposure immersion lithography and plasma-assisted shrink technology

dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorLazzarino, Frederic
dc.contributor.authorJohansson, Henrik
dc.contributor.authorTruffert, Vincent
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-18T15:49:37Z
dc.date.available2021-10-18T15:49:37Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16953
dc.sourceIIOimport
dc.titlePatterning of 25nm contact holes at 90nm pitch: combination of L/S double exposure immersion lithography and plasma-assisted shrink technology
dc.typeMeeting abstract
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorLazzarino, Frederic
dc.contributor.imecauthorTruffert, Vincent
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecLazzarino, Frederic::0000-0001-7961-9727
dc.contributor.orcidimecTruffert, Vincent::0000-0001-7851-830X
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewyes
dc.source.conferenceGaseous Electronics Conference - GEC
dc.source.conferencedate4/10/2010
dc.source.conferencelocationParis France
imec.availabilityPublished - imec


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