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Oxide CMP steps in the integration of vertical Si nanowire tunnelFET devices

dc.contributor.authorDevriendt, Katia
dc.contributor.authorOng, Patrick
dc.contributor.authorLee, Willie
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorLeunissen, Peter
dc.date.accessioned2021-10-18T16:02:42Z
dc.date.available2021-10-18T16:02:42Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17021
dc.sourceIIOimport
dc.titleOxide CMP steps in the integration of vertical Si nanowire tunnelFET devices
dc.typeProceedings paper
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.conferenceInternational Conference on Planarization Technology - ICPT
dc.source.conferencedate14/11/2010
dc.source.conferencelocationPhoenix, AZ USA
imec.availabilityPublished - imec


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