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DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices

dc.contributor.authorDos Santos, S.D.
dc.contributor.authorNicoletti, Talitha
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T16:06:15Z
dc.date.available2021-10-18T16:06:15Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17038
dc.sourceIIOimport
dc.titleDIBL behavior of triple gate FinFETs with SEG on biaxial strained devices
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage51
dc.source.endpage58
dc.source.conferenceMicroelectronics Technology and Devices - SBMICRO 2010
dc.source.conferencedate6/09/2010
dc.source.conferencelocationSao Paulo Brazil
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 31, Iss. 1


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