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X-ray microdiffraction study on crystallinity of micron-sized Ge films selectively grown on Si(001) substrates

dc.contributor.authorEbihara, K.
dc.contributor.authorHarada, S.
dc.contributor.authorKikkawa, J.
dc.contributor.authorNakamura, Y.
dc.contributor.authorSakai, A.
dc.contributor.authorWang, Gang
dc.contributor.authorCaymax, Matty
dc.contributor.authorImai, Y.
dc.contributor.authorKimura, S.
dc.contributor.authorSakata, O.
dc.date.accessioned2021-10-18T16:10:52Z
dc.date.available2021-10-18T16:10:52Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17059
dc.sourceIIOimport
dc.titleX-ray microdiffraction study on crystallinity of micron-sized Ge films selectively grown on Si(001) substrates
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage887
dc.source.endpage892
dc.source.conferenceSiGe, Ge, and related Compounds 4: Materials, Processing and Devices
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 33; Iss. 6


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