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Selective laser annealing for improved SiGe MEMS structural layers at 210°C

dc.contributor.authorEl Rifai, Joumana
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorAbdel Aziz, Ahmed
dc.contributor.authorPuers, Bob
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorSedky, Sherif
dc.date.accessioned2021-10-18T16:11:30Z
dc.date.available2021-10-18T16:11:30Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17062
dc.sourceIIOimport
dc.titleSelective laser annealing for improved SiGe MEMS structural layers at 210°C
dc.typeProceedings paper
dc.contributor.imecauthorPuers, Bob
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.orcidimecVan Hoof, Chris::0000-0002-4645-3326
dc.source.peerreviewno
dc.source.beginpage324
dc.source.endpage327
dc.source.conference23rd IEEE International Conference on Micro Electro Mechanical Systems - MEMS
dc.source.conferencedate24/01/2010
dc.source.conferencelocationHong Kong China
imec.availabilityPublished - imec


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