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Novel noncontact approach to characterization of mobility in inversion layers using corona charging of dielectric and SPV monitoring of sheet resistance

dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorRosseel, Erik
dc.contributor.authorMeszaros, Albert
dc.contributor.authorKis-Szabo, Krisztian
dc.contributor.authorTutto, P
dc.contributor.authorPap, Aron
dc.contributor.authorPavelka, Tibor
dc.contributor.authorWilson, Marshall
dc.contributor.authorFindlay, Andrew
dc.contributor.authorEdelman, P.
dc.contributor.authorLagowski, Jacek
dc.date.accessioned2021-10-18T16:17:25Z
dc.date.available2021-10-18T16:17:25Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17087
dc.sourceIIOimport
dc.titleNovel noncontact approach to characterization of mobility in inversion layers using corona charging of dielectric and SPV monitoring of sheet resistance
dc.typeProceedings paper
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorRosseel, Erik
dc.source.peerreviewyes
dc.source.beginpage33
dc.source.endpage41
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-based CMOS 6: New Materials, Processes, and Equipment
dc.source.conferencedate25/04/2010
dc.source.conferencelocationVancouver Canada
dc.identifier.urlhttp://ecsdl.org/ECST/
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 28, Issue 1


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