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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorCho, Moon Ju
dc.contributor.authorEneman, Geert
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-18T16:23:51Z
dc.date.available2021-10-18T16:23:51Z
dc.date.issued2010-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17113
dc.sourceIIOimport
dc.titleImprovements of NBTI Reliability in SiGe p-FETs
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.source.peerreviewyes
dc.source.beginpage1082
dc.source.endpage1085
dc.source.conference48th Annual IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/05/2010
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - imec


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