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High accuracy OPC-modeling by using advanced CD-SEM based contours in the next generation lithography

dc.contributor.authorHibino, Daisuke
dc.contributor.authorShindo, Hiroyuki
dc.contributor.authorAbe, Yuuichi
dc.contributor.authorHojyo, Yutaka
dc.contributor.authorFenger, Germain
dc.contributor.authorDo, Thuy
dc.contributor.authorKusnadi, Ir
dc.contributor.authorSturtevant, John L.
dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorVan de Kerkhove, Jeroen
dc.date.accessioned2021-10-18T17:05:27Z
dc.date.available2021-10-18T17:05:27Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17264
dc.sourceIIOimport
dc.titleHigh accuracy OPC-modeling by using advanced CD-SEM based contours in the next generation lithography
dc.typeProceedings paper
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.imecauthorVan de Kerkhove, Jeroen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage76381X
dc.source.conferenceMetrology, Inspection and Process Control for Microlithography XXIV
dc.source.conferencedate21/02/2010
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol.7638


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