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Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(110) and Si(110)

dc.contributor.authorHollaender, Bernd
dc.contributor.authorMinamisawa, R.
dc.contributor.authorBuca, Dan
dc.contributor.authorTrinkaus, H
dc.contributor.authorMantl, Siegfried
dc.contributor.authorLoo, Roger
dc.contributor.authorHartmann, Jean-Michel
dc.date.accessioned2021-10-18T17:07:44Z
dc.date.available2021-10-18T17:07:44Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17272
dc.sourceIIOimport
dc.titleIon channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(110) and Si(110)
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference17th International Conference on Ion Beam Modification of Materials - IBMM
dc.source.conferencedate22/08/2010
dc.source.conferencelocationMontréal (Québec) Canada
imec.availabilityPublished - imec


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