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Short course FEOL reliability: BTI and TDDB in high k/metal gate, FinFET and Ge-based technologies

dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-18T17:27:03Z
dc.date.available2021-10-18T17:27:03Z
dc.date.issued2010-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17334
dc.sourceIIOimport
dc.titleShort course FEOL reliability: BTI and TDDB in high k/metal gate, FinFET and Ge-based technologies
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM : Short Course
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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