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Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices – application to NBTI
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Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices – application to NBTI
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kaczer, Ben
;
Roussel, Philippe
;
Grasser, Tibor
;
Groeseneken, Guido
Journal
IEEE Electron Device Letters
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1822
since deposited on 2021-10-18
Acq. date: 2026-01-09
Citations
Metrics
Views
1822
since deposited on 2021-10-18
Acq. date: 2026-01-09
Citations