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Physical resist models and their calibration: their readiness for accurate EUV lithography simulation

dc.contributor.authorKlostermann, Ulrich K.
dc.contributor.authorMuelders, Thomas
dc.contributor.authorSchmoeller, Thiomas
dc.contributor.authorLorusso, Gian
dc.contributor.authorHendrickx, Eric
dc.date.accessioned2021-10-18T17:42:40Z
dc.date.available2021-10-18T17:42:40Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17384
dc.sourceIIOimport
dc.titlePhysical resist models and their calibration: their readiness for accurate EUV lithography simulation
dc.typeProceedings paper
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorHendrickx, Eric
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage763619
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography
dc.source.conferencedate21/02/2010
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol.7636


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