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Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates

dc.contributor.authorKobayashi, Daisuke
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPut, Sofie
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorPoizat, Marc
dc.contributor.authorHirose, Kazuyuki
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T17:44:37Z
dc.date.available2021-10-18T17:44:37Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17390
dc.sourceIIOimport
dc.titleProton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference11th European Conference on Radiation and its Effects on Components and Systems - RADECS
dc.source.conferencedate20/09/2010
dc.source.conferencelocationLangenfeld Austria
imec.availabilityPublished - open access


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