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Dry etch challenges in a 20 nm half-pitch single damascene spacer-defined patterning scheme

dc.contributor.authorKunnen, Eddy
dc.contributor.authorVersluijs, Janko
dc.contributor.authorAlaerts, Wilfried
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorStruyf, Herbert
dc.contributor.authorBeyer, Gerald
dc.date.accessioned2021-10-18T17:51:39Z
dc.date.available2021-10-18T17:51:39Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17411
dc.sourceIIOimport
dc.titleDry etch challenges in a 20 nm half-pitch single damascene spacer-defined patterning scheme
dc.typeMeeting abstract
dc.contributor.imecauthorVersluijs, Janko
dc.contributor.imecauthorAlaerts, Wilfried
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorBeyer, Gerald
dc.source.peerreviewyes
dc.source.conference3rd International Plasma Etch and Strip in Microelectronics Workshop - PESM
dc.source.conferencedate3/03/2010
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - imec


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