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dc.contributor.authorLin, Dennis
dc.contributor.authorWaldron, Niamh
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMartens, Koen
dc.contributor.authorWang, Wei-E
dc.contributor.authorSioncke, Sonja
dc.contributor.authorDelabie, Annelies
dc.contributor.authorBender, Hugo
dc.contributor.authorConard, Thierry
dc.contributor.authorTseng, W.H.
dc.contributor.authorLin, S.C.
dc.contributor.authorTemst, K.
dc.contributor.authorVantomme, Andre
dc.contributor.authorMitard, Jerome
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-18T18:20:00Z
dc.date.available2021-10-18T18:20:00Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17499
dc.sourceIIOimport
dc.titleExploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOS
dc.typeProceedings paper
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage173
dc.source.endpage183
dc.source.conferenceGraphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
dc.source.conferencedate25/04/2010
dc.source.conferencelocationVancouver Canada
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 28, Issue 5


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