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Optimized post-CMP and Pre-Epi cleans to enable smooth and high quality epitaxial strained Ge growth on SiGe strain relaxed buffers

dc.contributor.authorLoo, Roger
dc.contributor.authorSouriau, Laurent
dc.contributor.authorOng, Patrick
dc.contributor.authorKenis, Karine
dc.contributor.authorRip, Jens
dc.date.accessioned2021-10-18T18:29:54Z
dc.date.available2021-10-18T18:29:54Z
dc.date.issued2010-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17527
dc.sourceIIOimport
dc.titleOptimized post-CMP and Pre-Epi cleans to enable smooth and high quality epitaxial strained Ge growth on SiGe strain relaxed buffers
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorRip, Jens
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.source.peerreviewno
dc.source.beginpage83
dc.source.endpage84
dc.source.conference10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces - UCPSS
dc.source.conferencedate19/09/2010
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - imec


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