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High quality NH2SAM (Self Assembled Monolayer) diffusion barrier for advanced copper interconnects

dc.contributor.authorMaestre Caro, Arantxa
dc.contributor.authorZhao, Larry
dc.contributor.authorMaes, Guido
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorBeyer, Gerald
dc.contributor.authorTokei, Zsolt
dc.contributor.authorArmini, Silvia
dc.contributor.authorTravaly, Youssef
dc.date.accessioned2021-10-18T18:37:16Z
dc.date.available2021-10-18T18:37:16Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17547
dc.sourceIIOimport
dc.titleHigh quality NH2SAM (Self Assembled Monolayer) diffusion barrier for advanced copper interconnects
dc.typeProceedings paper
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorArmini, Silvia
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.source.peerreviewno
dc.source.beginpageF02.01
dc.source.conferenceAdvanced Interconnects and Chemical Mechanical Planarization for Micro- and Nanoelectronics
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA US
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1249


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