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Enhancement of GaN-based device robustness by means of in-situ SiN cap layer

dc.contributor.authorMedjdoub, Farid
dc.contributor.authorMarcon, Denis
dc.contributor.authorCheng, Kai
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLeys, Maarten
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-18T18:58:54Z
dc.date.available2021-10-18T18:58:54Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17607
dc.sourceIIOimport
dc.titleEnhancement of GaN-based device robustness by means of in-situ SiN cap layer
dc.typeMeeting abstract
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
dc.source.conferencedate2/09/2010
dc.source.conferencelocationNoordwijk Netherlands
imec.availabilityPublished - imec


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