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Preliminary reliability at 50 V of State-of-the-art RF power GaN-on-Si HEMTs

dc.contributor.authorMedjdoub, Farid
dc.contributor.authorMarcon, Denis
dc.contributor.authorDas, Jo
dc.contributor.authorDerluyn, Joff
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-18T18:59:18Z
dc.date.available2021-10-18T18:59:18Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17608
dc.sourceIIOimport
dc.titlePreliminary reliability at 50 V of State-of-the-art RF power GaN-on-Si HEMTs
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage195
dc.source.endpage196
dc.source.conference68th Annual Device Research Conference - DRC
dc.source.conferencedate21/06/2010
dc.source.conferencelocationSouth Bend, IN USA
imec.availabilityPublished - imec


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