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C2H4-based plasma-assisted CD shrink and contact patterning for RRAM application

dc.contributor.authorMilenin, Alexey
dc.contributor.authorLisoni, Judit
dc.contributor.authorJossart, Nico
dc.contributor.authorJurczak, Gosia
dc.contributor.authorStruyf, Herbert
dc.contributor.authorShamiryan, Denis
dc.contributor.authorBrouri, Mohand
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-18T19:08:34Z
dc.date.available2021-10-18T19:08:34Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17631
dc.sourceIIOimport
dc.titleC2H4-based plasma-assisted CD shrink and contact patterning for RRAM application
dc.typeProceedings paper
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorJossart, Nico
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.beginpageF04.09
dc.source.conferenceAdvanced Interconnects and Chemical Planarization for Micro- and Nanoelectronics
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1249


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