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Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobility

dc.contributor.authorMitard, Jerome
dc.contributor.authorVincent, Benjamin
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorKrom, Raymond
dc.contributor.authorLoo, Roger
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-18T19:12:41Z
dc.date.available2021-10-18T19:12:41Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17641
dc.sourceIIOimport
dc.titleElectrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobility
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage157
dc.source.endpage169
dc.source.conferenceDielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing
dc.source.conferencedate25/04/2010
dc.source.conferencelocationVancouver Canada
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 28, Issue 2


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