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dc.contributor.authorMitard, Jerome
dc.contributor.authorVincent, Benjamin
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMartens, Koen
dc.contributor.authorKrom, Raymond
dc.contributor.authorLoo, Roger
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-18T19:13:09Z
dc.date.available2021-10-18T19:13:09Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17642
dc.sourceIIOimport
dc.titleElectrical characterization of Si capped Hf)2/metal gate Ge-pFETs: physical insight into critical parameters
dc.typeMeeting abstract
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage987
dc.source.conference217th Electrochemical Society Meeting
dc.source.conferencedate25/04/2010
dc.source.conferencelocationVancouver Canada
imec.availabilityPublished - imec
imec.internalnotesMeeting Abstracts; MA2010-01


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