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High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD

dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorGarcia Bardon, Marie
dc.contributor.authorChristie, Phillip
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorMagnone, Paolo
dc.contributor.authorCrupi, Felice
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVincent, Benjamin
dc.contributor.authorChiarella, Thomas
dc.contributor.authorLoo, Roger
dc.contributor.authorTseng, Joshua
dc.contributor.authorYamaguchi, Shinpei
dc.contributor.authorTakeoka, Shinji
dc.contributor.authorWang, Wei-E
dc.contributor.authorAbsil, Philippe
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-18T19:13:41Z
dc.date.available2021-10-18T19:13:41Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17643
dc.sourceIIOimport
dc.titleHigh-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGarcia Bardon, Marie
dc.contributor.imecauthorChristie, Phillip
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage249
dc.source.endpage252
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco
imec.availabilityPublished - open access


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