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Strain evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy

dc.contributor.authorNaka, N.
dc.contributor.authorOhyama, H.
dc.contributor.authorTsunoda, I.
dc.contributor.authorTakakura, K.
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T19:29:11Z
dc.date.available2021-10-18T19:29:11Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17682
dc.sourceIIOimport
dc.titleStrain evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage68
dc.source.endpage71
dc.source.conference2nd Semiconductor Materials and Devices Forum - SMDF-2
dc.source.conferencedate11/12/2010
dc.source.conferencelocationKumamoto Japan
imec.availabilityPublished - open access


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