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Analysis of pocket profile deactivation and its impact on Vth variation for laser annealed device using an atomistic kinetic Monte Carlo approach

dc.contributor.authorNoda, Taichi
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorVrancken, Christa
dc.contributor.authorOrtolland, Claude
dc.contributor.authorRosseel, Erik
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-18T19:38:02Z
dc.date.available2021-10-18T19:38:02Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17703
dc.sourceIIOimport
dc.titleAnalysis of pocket profile deactivation and its impact on Vth variation for laser annealed device using an atomistic kinetic Monte Carlo approach
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage383
dc.source.endpage386
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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