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Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy

dc.contributor.authorOyhama, Hidenori
dc.contributor.authorNaka, N.
dc.contributor.authorTakakura, K.
dc.contributor.authorTsunoda, I.
dc.contributor.authorLondos, C.A
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T19:57:54Z
dc.date.available2021-10-18T19:57:54Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17753
dc.sourceIIOimport
dc.titleEvaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy
dc.typeMeeting abstract
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of Ge and III-V Materials
dc.source.conferencedate7/06/2010
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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