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Freeze-out effects on the characteristics of deep submicron Si nMOSFETSs in the 77 K to 300 K range

dc.contributor.authorCroon, Jeroen
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKubicek, Stefan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-30T08:02:09Z
dc.date.available2021-09-30T08:02:09Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1785
dc.sourceIIOimport
dc.titleFreeze-out effects on the characteristics of deep submicron Si nMOSFETSs in the 77 K to 300 K range
dc.typeProceedings paper
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage187
dc.source.endpage198
dc.source.conferenceProceedings of the 4th Symposium on Low Temperature Electronics and High Temperature Superconductivity
dc.source.conferencedate4/05/1997
dc.source.conferencelocationMontréal Canada
imec.availabilityPublished - imec
imec.internalnotesECS Proceedings; Vol. 97-2


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