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Improved extraction of Si substrate parameters from combined I-V and C-V measurements on P-N junction diodes

dc.contributor.authorCzerwinski, A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorTomaszewski, D.
dc.contributor.authorGibki, J.
dc.contributor.authorBakowski, A.
dc.date.accessioned2021-09-30T08:02:24Z
dc.date.available2021-09-30T08:02:24Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1787
dc.sourceIIOimport
dc.titleImproved extraction of Si substrate parameters from combined I-V and C-V measurements on P-N junction diodes
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage477
dc.source.endpage482
dc.source.conferenceProceedings of the 7th International Autumn Meeting : Gettering and Defect Engineering in Semiconductor Technology - GADEST '97
dc.source.conferencedate5/10/1997
dc.source.conferencelocationSpa Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena. Vols. 57-58


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