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Channel backscattering coefficient impact on FinFET devices with uniaxial/biaxial strain engineering

dc.contributor.authorRodrigues, Michele
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T20:52:38Z
dc.date.available2021-10-18T20:52:38Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17889
dc.sourceIIOimport
dc.titleChannel backscattering coefficient impact on FinFET devices with uniaxial/biaxial strain engineering
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage17
dc.source.endpage20
dc.source.conference11th International Conference on Ultimate Integration on Silicon - ULIS
dc.source.conferencedate18/03/2010
dc.source.conferencelocationGlasgow UK
imec.availabilityPublished - open access
imec.internalnotes


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