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Influence of the process sequence and termal budget on the strain of SiC stressor layers formed by ion implantation

dc.contributor.authorRosseel, Erik
dc.contributor.authorOrtolland, Claude
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorSchram, Tom
dc.contributor.authorFalepin, Annelies
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMoussa, Alain
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAmeen, Mike
dc.contributor.authorRubin, Leonard
dc.date.accessioned2021-10-18T21:01:06Z
dc.date.available2021-10-18T21:01:06Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17909
dc.sourceIIOimport
dc.titleInfluence of the process sequence and termal budget on the strain of SiC stressor layers formed by ion implantation
dc.typeProceedings paper
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorFalepin, Annelies
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage32
dc.source.endpage40
dc.source.conference18th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP
dc.source.conferencedate29/09/2010
dc.source.conferencelocationGainesville, FL USA
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5623702
imec.availabilityPublished - open access


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