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Influence of the process sequence and termal budget on the straion fof SiC stressor layers formed by Ion Implantation

dc.contributor.authorRosseel, Erik
dc.contributor.authorOrtolland, Claude
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorSchram, Tom
dc.contributor.authorFalepin, Annelies
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAmeen, Mike
dc.contributor.authorRubin, Leonard
dc.date.accessioned2021-10-18T21:01:33Z
dc.date.available2021-10-18T21:01:33Z
dc.date.issued2010-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17910
dc.sourceIIOimport
dc.titleInfluence of the process sequence and termal budget on the straion fof SiC stressor layers formed by Ion Implantation
dc.typeMeeting abstract
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorFalepin, Annelies
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.source.peerreviewno
dc.source.conference18th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP
dc.source.conferencedate29/09/2010
dc.source.conferencelocationGainesville, FL USA
imec.availabilityPublished - imec


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