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A quantitative inquisition into ESD sensitivity to strain in nanoscale CMOS protection devices

dc.contributor.authorSarkar, Deblina
dc.contributor.authorThijs, Steven
dc.contributor.authorLinten, Dimitri
dc.contributor.authorRuss, Christian
dc.contributor.authorGossner, Harald
dc.contributor.authorBanerjee, Kaustav
dc.date.accessioned2021-10-18T21:16:02Z
dc.date.available2021-10-18T21:16:02Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17944
dc.sourceIIOimport
dc.titleA quantitative inquisition into ESD sensitivity to strain in nanoscale CMOS protection devices
dc.typeProceedings paper
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage808
dc.source.endpage811
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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