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Vapor phase doping for ultra shallow juntion formation in advanced Si CMOS devices

dc.contributor.authorShimizu, Yasua
dc.contributor.authorNguyen, Duy
dc.contributor.authorJiang, Sijia
dc.contributor.authorRosseel, Erik
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-18T21:30:08Z
dc.date.available2021-10-18T21:30:08Z
dc.date.issued2010-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17977
dc.sourceIIOimport
dc.titleVapor phase doping for ultra shallow juntion formation in advanced Si CMOS devices
dc.typeMeeting abstract
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference5th International Workshop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate29/01/2010
dc.source.conferencelocationSendai Japan
imec.availabilityPublished - imec


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