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Heavily doping technology for strained Ge1-xSnx layers

dc.contributor.authorShimura, Yosuke
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorVincent, Benjamin
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorZaima, Shigeaki
dc.date.accessioned2021-10-18T21:30:36Z
dc.date.available2021-10-18T21:30:36Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17978
dc.sourceIIOimport
dc.titleHeavily doping technology for strained Ge1-xSnx layers
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference71st Fall Meeting of the Japan Society of Applied Physics
dc.source.conferencedate14/09/2010
dc.source.conferencelocationNagasaki Japan
imec.availabilityPublished - imec


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