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ALD on high mobility channels: engineering the proper gate stack passivation

dc.contributor.authorSioncke, Sonja
dc.contributor.authorLin, Hang Chun
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDelabie, Annelies
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorStruyf, Herbert
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorTemst, K.
dc.contributor.authorVantomme, Andre
dc.contributor.authorMuller, Matthias
dc.contributor.authorKolbe, Michael
dc.contributor.authorBeckhoff, Burkhard
dc.contributor.authorSchmeisser, Dieter
dc.contributor.authorTallarida, Massimo
dc.date.accessioned2021-10-18T21:40:04Z
dc.date.available2021-10-18T21:40:04Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17997
dc.sourceIIOimport
dc.titleALD on high mobility channels: engineering the proper gate stack passivation
dc.typeProceedings paper
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorVantomme, Andre
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage9
dc.source.endpage23
dc.source.conferenceAtomic Layer Deposition Applications 6
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 33, Issue 2


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