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Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

dc.contributor.authorTakeuchi, S.
dc.contributor.authorShimura, Y.
dc.contributor.authorNishimura, T.
dc.contributor.authorVincent, Benjamin
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDemeulemeester, J.
dc.contributor.authorTemst, K.
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, O.
dc.contributor.authorSakai, A.
dc.contributor.authorZaima, S.
dc.date.accessioned2021-10-18T22:09:32Z
dc.date.available2021-10-18T22:09:32Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18062
dc.sourceIIOimport
dc.titleAssessment of Ge1-xSnx alloys for strained Ge CMOS devices
dc.typeMeeting abstract
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1909
dc.source.conference218th ECS Meeting
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesMeeting Abstracts; Vol. 2010-02


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