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Modeling Ar/Cl2/O2 and Ar/SiH4/O2 Inductively Coupled Plasmas used for anisotropic etching of silicon and deposition of SiOx

dc.contributor.authorTinck, Stefan
dc.contributor.authorBogaerts, Annemie
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-18T22:21:48Z
dc.date.available2021-10-18T22:21:48Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18089
dc.sourceIIOimport
dc.titleModeling Ar/Cl2/O2 and Ar/SiH4/O2 Inductively Coupled Plasmas used for anisotropic etching of silicon and deposition of SiOx
dc.typeProceedings paper
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.conference20th ESCAMPIG
dc.source.conferencedate13/07/2010
dc.source.conferencelocationNovi Sad Serbia
imec.availabilityPublished - imec


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