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Fabrication of porogen residue free ultra low-k PECVD material by subsequent H2-afterglow plasma treatment and UV curing

dc.contributor.authorUrbanowicz, Adam
dc.contributor.authorVanstreels, Kris
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorShamiryan, Denis
dc.contributor.authorCremel, Maxime
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBaklanov, Mikhaïl
dc.date.accessioned2021-10-18T22:34:37Z
dc.date.available2021-10-18T22:34:37Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18116
dc.sourceIIOimport
dc.titleFabrication of porogen residue free ultra low-k PECVD material by subsequent H2-afterglow plasma treatment and UV curing
dc.typeProceedings paper
dc.contributor.imecauthorVanstreels, Kris
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecVanstreels, Kris::0000-0002-4420-0966
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage65
dc.source.endpage71
dc.source.conferenceAdvanced Metallization Confererce 2009 - AMC 2009
dc.source.conferencedate13/10/2009
dc.source.conferencelocationBaltimore, MD USA
imec.availabilityPublished - imec


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