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Evolution of the hydrogen terminated structure of the Si(100) surface and its interaction with H2 at 20 - 800°C

dc.contributor.authorUto, Atsushi
dc.contributor.authorSakuraba, Masao
dc.contributor.authorCaymax, Matty
dc.contributor.authorMurota, Junichi
dc.date.accessioned2021-10-18T22:37:22Z
dc.date.available2021-10-18T22:37:22Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18122
dc.sourceIIOimport
dc.titleEvolution of the hydrogen terminated structure of the Si(100) surface and its interaction with H2 at 20 - 800°C
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference5th International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate24/05/2010
dc.source.conferencelocationStockholm Sweden
imec.availabilityPublished - imec


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