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dc.contributor.authorVandelli, Luca
dc.contributor.authorArreghini, Antonio
dc.contributor.authorPadovani, Andrea
dc.contributor.authorLarcher, Luca
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorDella Marca, Vincenzo
dc.contributor.authorPavan, Paolo
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-18T23:17:37Z
dc.date.available2021-10-18T23:17:37Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18209
dc.sourceIIOimport
dc.titleRole of holes and electrons during erase of TANOS memories: evidence for dipole formation and its impact on reliability
dc.typeProceedings paper
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage731
dc.source.endpage737
dc.source.conference48th Annual IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/05/2010
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - imec


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