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Germanium doping of Si substrates for improved device characteristics and yield

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorChen, J.
dc.contributor.authorXu, W.
dc.contributor.authorYang, D.
dc.contributor.authorRafi, J.M.
dc.contributor.authorOhyama, H.
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-18T23:31:02Z
dc.date.available2021-10-18T23:31:02Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18238
dc.sourceIIOimport
dc.titleGermanium doping of Si substrates for improved device characteristics and yield
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1041
dc.source.endpage1046
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate18/03/2010
dc.source.conferencelocationShanghai China
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 27, Issue 1


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