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Impact of Ge doping on Si substrate and diode characteristics

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorLauwaert, Johan
dc.contributor.authorChen, Jiiahe
dc.contributor.authorVrielinck, Henk
dc.contributor.authorRafi, Joan Marc
dc.contributor.authorOhyama, Hidenori
dc.contributor.authorSimoen, Eddy
dc.contributor.authorYang, Deren
dc.date.accessioned2021-10-18T23:31:31Z
dc.date.available2021-10-18T23:31:31Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18239
dc.sourceIIOimport
dc.titleImpact of Ge doping on Si substrate and diode characteristics
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1252-I05-13
dc.source.conferenceMaterials for End-of-Roadmap Scaling of CMOS Devices
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1252


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